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20 10-12-21 rev. 1.92 page 1 spp07n65c3, spi07n65c3 spa07n65c3 coolmos? power transistor v ds 650 v r ds ( on ) 0.6 i d 7.3 a feature ? new revolutionary high voltage technology ? ultra low gate charge ? periodic avalanche rated ? extreme d v /d t rated ? high peak current capability ? improved transconductance ? p g -to-220-3 : fully isolated package (2500 vac; 1 minute) p g -to220-3 p g -to220 p g -to262-3-1 2 p - to220 - 3 - 1 2 3 1 p-to220-3-31 1 2 3 marking 07n65c3 07n65c3 07n65c3 type package spp07n65c3 p g -to220 spi07n65c3 p g -to262-3 spa07n65c3 p g -to220-3 maximum ratings parameter symbol value unit spp_i spa continuous drain current t c = 25 c t c = 100 c i d 7.3 4.6 7.3 1) 4.6 1) a pulsed drain current, t p limited by t j max i d p uls 21.9 21.9 a avalanche energy, single pulse i d =1.5a, v dd =50v e as 230 230 mj avalanche energy, repetitive t ar limited by t jmax 2) i d =2.5a, v dd =50v e ar 0.5 0.5 avalanche current, repetitive t a r limited by t j max i a r 2.5 2.5 a gate source voltage v gs 20 20 v gate source voltage ac (f >1hz) v gs 30 30 power dissipation, t c = 25c p tot 83 32 w operating and storage temperature t j , t st g -55...+150 c
2010-12-21 rev. 1.92 page 2 spp07n65c3, spi07n65c3 spa07n65c3 maximum ratings parameter symbol value unit drain source voltage slope v ds = 480 v, i d = 7.3 a, t j = 125 c d v /d t 50 v/ns thermal characteristics parameter symbol values unit min. typ. max. thermal resistance, junction - case r thjc - - 1.5 k/w thermal resistance, junction - case, fullpak r thjc _ fp - - 3.9 thermal resistance, junction - ambient, leaded r thja - - 62 thermal resistance, junction - ambient, fullpak r thja _ fp - - 80 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 3) r thja - - - 35 62 - soldering temperature, wavesoldering 1.6 mm (0.063 in.) from case for 10s t sold - - 260 c electrical characteristics, at t j =25c unless otherwise specified parameter symbol conditions values unit min. typ. max. drain-source breakdown voltage v (br)dss v gs =0v, i d =0.25ma 650 - - v drain-source avalanche breakdown voltage v (br)ds v gs =0v, i d =2.5a - 7 3 0 - gate threshold voltage v gs(th) i d =350 a, v gs =v ds 2.1 3 3.9 zero gate voltage drain current i dss v ds =600v, v gs =0v, t j =25c t j =150c - - 0.5 - 1 100 a gate-source leakage current i gss v gs =20v, v ds =0v - - 100 na drain-source on-state resistance r ds(on) v gs =10v, i d =4.6a t j =25c t j =150c - - 0.54 1.46 0.6 - gate input resistance r g f =1mhz, open drain - 0.8 -
2010-12-21 rev. 1.92 page 3 spp07n65c3, spi07n65c3 spa07n65c3 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol conditions values unit min. typ. max. characteristics transconductance g fs v ds 2* i d * r ds(on)max , i d =4.6a - 6 - s input capacitance c iss v gs =0v, v ds =25v, f =1mhz - 790 - pf output capacitance c oss - 260 - reverse transfer capacitance c rss - 16 - effective output capacitance, 4) energy related c o(er) v gs =0v, v ds =0v to 480v - 30 - effective output capacitance, 5) time related c o(tr) - 55 - turn-on delay time t d(on) v dd =380v, v gs =0/13v, i d =7.3a, r g =12 , t j =125c - 6 - ns rise time t r - 3.5 - turn-off delay time t d(off) - 60 100 fall time t f - 7 15 gate charge characteristics gate to source charge q gs v dd =480v, i d =7.3a - 3 - nc gate to drain charge q gd - 9.2 - gate charge total q g v dd =480v, i d =7.3a, v gs =0 to 10v - 21 27 gate plateau voltage v (plateau) v dd =480v, i d =7.3a - 5.5 - v 1 limited only by maximum temperature 2 repetitve avalanche causes additional power losses that can be calculated as p av = e ar * f . 3 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air. 4 c o(er) is a fixed capacitance that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss . 5 c o(tr) is a fixed capacitance that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss .
2010-12-21 rev. 1.92 page 4 spp07n65c3, spi07n65c3 spa07n65c3 electrical characteristics parameter symbol conditions values unit min. typ. max. inverse diode continuous forward current i s t c =25c - - 7.3 a inverse diode direct current, pulsed i sm - - 21.9 inverse diode forward voltage v sd v gs =0v, i f = i s - 1 1.2 v reverse recovery time t rr v r =480v, i f = i s , d i f /d t =100a/s - 400 600 ns reverse recovery charge q rr - 4 - c peak reverse recovery current i rrm - 28 - a peak rate of fall of reverse recovery current di rr /dt t j =25c - 800 - a/s typical transient thermal characteristics symbol value unit symbol value unit spp_i spa spp_i spa r th1 0.024 0.024 k/w c th1 0.00012 0.00012 ws/k r th2 0.046 0.046 c th2 0.0004578 0.0004578 r th3 0.085 0.085 c th3 0.000645 0.000645 r th4 0.308 0.195 c th4 0.001867 0.001867 r th5 0.317 0.45 c th5 0.004795 0.007558 r th6 0.112 2.511 c th6 0.045 0.412 external heatsink t j t case t amb c th1 c th2 r th1 r th,n c th,n p tot (t)
20 10-12-21 rev. 1.92 page 5 spp07n65c3, spi07n65c3 spa07n65c3 1 power dissipation p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 10 20 30 40 50 60 70 80 w 100 spp07n65c3 p tot 2 power dissipation fullpak p tot = f ( t c ) 0 20 40 60 80 100 120 c 160 t c 0 4 8 12 16 20 24 28 w 34 p tot 3 safe operating area i d = f ( v ds ) parameter : d = 0 , t c =25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 2 10 a i d tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms dc 4 safe operating area fullpak i d = f ( v ds ) parameter: d = 0, t c = 25c 10 0 10 1 10 2 10 3 v v ds -2 10 -1 10 0 10 1 10 2 10 a i d tp = 0.001 ms tp = 0.01 ms tp = 0.1 ms tp = 1 ms tp = 10 ms dc
20 10-12-21 rev. 1.92 page 6 spp07n65c3, spi07n65c3 spa07n65c3 5 transient thermal impedance z thjc = f ( t p ) parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -1 s t p -3 10 -2 10 -1 10 0 10 1 10 k/w z thjc d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse 6 transient thermal impedance fullpak z thjc = f ( t p ) parameter: d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 1 s t p -3 10 -2 10 -1 10 0 10 1 10 k/w z thjc d = 0.5 d = 0.2 d = 0.1 d = 0.05 d = 0.02 d = 0.01 single pulse 7 typ. output characteristic i d = f ( v ds ); t j =25c parameter: t p = 10 s, v gs 0 5 10 15 v ds 25 v 0 4 8 12 16 a 24 i d 4,5v 5v 5,5v 6v 6,5v 7v 20v 10v 8v 8 typ. output characteristic i d = f ( v ds ); t j =150c parameter: t p = 10 s, v gs 0 2 4 6 8 10 12 14 16 18 20 22 v 25 v ds 0 1 2 3 4 5 6 7 8 9 10 11 a 13 i d 4v 4.5v 5v 5.5v 6v 20v 8v 6.5v
20 10-12-21 rev. 1.92 page 7 spp07n65c3, spi07n65c3 spa07n65c3 9 typ. drain-source on resistance r ds(on) = f ( i d ) parameter: t j =150c, v gs 0 2 4 6 8 10 12 a 15 i d 0 1 2 3 4 5 6 7 8 10 r ds(on) 4v 4.5v 5v 5.5v 6v 6.5v 8v 20v 10 drain-source on-state resistance r ds(on) = f ( t j ) parameter : i d = 4.6 a, v gs = 10 v -60 -20 20 60 100 c 180 t j 0 0.4 0.8 1.2 1.6 2 2.4 2.8 3.4 spp07n65c3 r ds(on) typ 98% 11 typ. transfer characteristics i d = f ( v gs ); v ds 2 x i d x r ds(on)max parameter: t p = 10 s 0 2 4 6 8 10 12 14 16 v 20 v gs 0 2 4 6 8 10 12 14 16 18 20 a 24 i d 25c 150c 12 typ. gate charge v gs = f ( q gate ) parameter: i d = 7.3 a pulsed 0 4 8 12 16 20 24 28 nc 34 q gate 0 2 4 6 8 10 12 v 16 spp07n65c3 v gs 0,8 v ds max ds max v 0,2
20 10-12-21 rev. 1.92 page 8 spp07n65c3, spi07n65c3 spa07n65c3 13 forward characteristics of body diode i f = f (v sd ) parameter: t j , t p = 10 s 0 0.4 0.8 1.2 1.6 2 2.4 v 3 v sd -1 10 0 10 1 10 2 10 a spp07n65c3 i f t j = 25 c typ t j = 25 c (98%) t j = 150 c typ t j = 150 c (98%) 14 typ. switching time t = f ( i d ), inductive load, t j =125c par.: v ds =380v, v gs =0/+13v, r g =12 0 1 2 3 4 5 6 a 8 i d 0 10 20 30 40 50 60 70 ns 90 t td(off) tf td(on) tr 15 typ. switching time t = f ( r g ), inductive load, t j =125c par.: v ds =380v, v gs =0/+13v, i d =7.3 a 0 20 40 60 80 100 130 r g 0 50 100 150 200 250 300 350 400 ns 500 t td(off) td(on) tf tr 16 typ. drain current slope d i /d t = f( r g ), inductive load, t j = 125c par.: v ds =380v, v gs =0/+13v, i d =7.3a 0 20 40 60 80 100 130 r g 0 500 1000 1500 2000 a/s 3000 d i /d t di/dt(on) di/dt(off)
20 10-12-21 rev. 1.92 page 9 spp07n65c3, spi07n65c3 spa07n65c3 17 typ. drain source voltage slope d v /d t = f( r g ), inductive load, t j = 125c par.: v ds =380v, v gs =0/+13v, i d =7.3a 0 20 40 60 80 120 r g 0 10 20 30 40 50 60 70 80 v/ns 100 d v /d t dv/dt(on) dv/dt(off) 18 typ. switching losses e = f ( i d ), inductive load, t j =125c par.: v ds =380v, v gs =0/+13v, r g =12 0 1 2 3 4 5 6 a 8 i d 0 0.005 0.01 0.015 mws 0.025 e eon* eoff *) e on includes sdp06s60 diode commutation losses. 19 typ. switching losses e = f ( r g ), inductive load, t j =125c par.: v ds =380v, v gs =0/+13v, i d =11a 0 20 40 60 80 100 130 r g 0 0.02 0.04 0.06 0.08 0.1 0.12 0.14 0.16 mws 0.2 e eon* eoff *) e on includes sdp06s60 diode commutation losses. 20 avalanche soa i ar = f ( t ar ) par.: t j 150 c
20 10-12-21 rev. 1.92 page 10 spp07n65c3, spi07n65c3 spa07n65c3 21 avalanche energy e as = f ( t j ) par.: i d = 1.5 a, v dd = 50 v 20 40 60 80 100 120 c 160 t j 0 20 40 60 80 100 120 140 160 180 200 220 mj 260 e as 23 avalanche power losses p ar = f ( f ) parameter: e ar =0.5mj 10 4 10 5 10 6 mhz f 0 100 200 300 w 500 p ar 22 drain-source breakdown voltage v (br)dss = f ( t j ) -60 -20 20 60 100 c 180 t j 585 605 625 645 665 685 705 725 745 v 785 spp07n65c3 v (br)dss 24 typ. capacitances c = f ( v ds ) parameter: v gs =0v, f =1 mhz 0 100 200 300 400 v 600 v ds 0 10 1 10 2 10 3 10 4 10 pf c c iss c oss c rss
20 10-12-21 rev. 1.92 page 11 spp07n65c3, spi07n65c3 spa07n65c3 25 typ. c oss stored energy e oss = f ( v ds ) 0 100 200 300 400 v 600 v ds 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 j 5.5 e oss definition of diodes switching characteristics
20 10-12-21 rev. 1.92 page 12 spp 07 n6 5 c3 , spi07n65c3 spa 07 n6 5 c3 p g -to220-3 ?
20 10-12-21 rev. 1.92 page 13 spp 07 n6 5 c3 , spi07n65c3 spa 07 n6 5 c3 p g -to-220-3 (fullpak)
20 10-12-21 rev. 1.92 page 14 spp 07 n6 5c3, spi07n65c3 spa 07 n6 5 c3 p g -to2 6 2-3 , pg-to262-3 (i2-pak)
20 10-12-21 rev. 1.92 page 15 spp 07 n6 5c3, spi07n65c3 spa 07 n6 5 c3 published by infineon technologies ag 81726 munich, germany ? 2010 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office (www.infineon.com). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

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